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| SMD Type General Purpose Transistor BCX71G SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 PNP Epitaxial Silicon Transistor 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PC TSTG Rating -45 -45 -5 -100 350 150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES hFE Testconditons IC= -2mA, IB=0 IE= -1iA, IC=0 VCE= -32V, VBE=0 VCE= -5V, IC= -2mA VCE= -1V, IC= -50iA Collector-Emitter Saturation Voltage VCE (sat) IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capactance Noise Figure Turn On Time Turn Off Time VBE (sat) VBE (on) Cob NF tON tOFF IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA VCE= -5V, IC= -2mA VCB= -10V, IE=0, f=1MHz IC=0.2mA, VCE=5V,f=1KHz, RS=2KU IC= -10mA, IB1= -1mA IB2= -1mA, VBB=3.6V,RL=990U 6 150 800 -0.6 -0.68 -0.6 120 60 -0.25 -0.55 -0.85 -1.05 -0.75 V V V V V pF dB ns ns Min -45 -5 -20 220 Typ Max Unit V V nA Marking Marking BG +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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